DIODE WITH P-N-JUNCTION HAVING CONTROLLED HETEROSTRUCTURE, SELF-POSITIONING ON HgCdTe, FOR IMAGER IN INFRARED SPECTRUM AREA Russian patent published in 2017 - IPC H01L31/103 H01L31/18 

FIELD: physics.

SUBSTANCE: heterostructural diode with the p-n-junction comprises a substrate based on HgCdTe, mainly n-doped, wherein the said substrate comprises the first part (4) having the first cadmium concentration, the second part (11) having the second cadmium concentration larger than the first cadmium concentration, wherein the second part (11) forms a heterostructure with the first part (4), a p⁺ -doped zone (9) or a p-doped zone located in the concentrated part (11) and extending into the first part (4) and forming a p-n-junction (10) with the n-doped part of the first part (4) called the base substrate ( 1). The concentrated part (11) is located only in the p⁺ -doped zone (9) and forms a pocket (12) with a substantially constant cadmium concentration.

EFFECT: invention is intended to provide high-quality heterostructure at a low cost to facilitate adjustment of the p-n-junction relative position towards the heterojunction and to improve the repeatability and reproducibility of the relative position from one substrate to the other substrate and from one diode to the other diode on the same substrate.

13 cl, 6 dwg