METHOD OF MEASURING DARK CURRENT ON TEST MATRIX STRUCTURES WITH VARIABLE TOPOLOGY FOR DETERMINING PASSIVATION EFFICIENCY OF LARGE-FORMAT MATRIX PHOTODETECTORS WITH SMALL PITCH Russian patent published in 2025 - IPC H02S50/10 G01R31/26 

FIELD: measuring.

SUBSTANCE: invention relates to a method of testing and analysing matrix photodetectors of a different spectral range in the technical field of semiconductor optoelectronic devices for various purposes. Proposed is a method for measuring dark current on test structures with a variable perimeter-to-area ratio of photosensitive elements of a different spectral range, which includes making test structures on the periphery of working plates, characterized in that the test structure is formed by photolithography by groups of combined elements with the same pitch and format, which coincides with the wide-angle matrix photodetector with a small pitch based on a large reading integrated circuit, in which the spread of input resistances for the combined photosensitive elements is small enough to be used as a dark current meter. Wide-angle matrix of photodetectors with a small pitch is made on the basis of photosensitive matrices, including non-cooled ones, for which application of a passivating coating is required. Test structure is formed in staggered order, on one side, by groups of elements combined into squares with area (2ⁿp-d)², (np+p-d)² or a combination thereof, where p is the pitch of the matrix elements, d is the gap between the elements, n=0,1,2,3,4,5ј (nonnegative integers), and on other side is with standard matrix elements and fills full format of matrix photodetector. And in order to obtain the dependence of the dark current on the ratio of the perimeter to the area of the photosensitive elements, the dark current of the groups of the combined elements is first calculated as an arithmetic average, then, based on the obtained data, integral distributions are constructed for each area on the full format of the test structure, from which the dark current is determined as the median average.

EFFECT: invention relates to a method of measuring dark current in large-format matrix photodetectors with a small pitch and can be used to determine quality of passivation and significantly speed up development of novel passivating coatings in matrix photodetector devices.

5 cl, 12 dwg