METHOD OF PRODUCING PHOTODETECTORS BASED ON EPITAXIAL GaN/AlGaN p-i-n STRUCTURES Russian patent published in 2014 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: invention relates to photodiode technologies based on epitaxial GaN/AlGaN p-i-n structures which convert ultraviolet radiation. The invention discloses a method of producing a multi-element photodetector based on epitaxial GaN/Al_xGa_1-xN p-i-n structures. Production is carried out using a mesa technique of ion etching to a n+-AlGaN layer, heat-treating the surface of the mesa p-i-n diodes at 450-550°C for 90-200 s to heal radiation and stoichiometric defects formed on the perimeter the p-i-n diodes under the action of an ion beam or other surface damages arising on technological operations of producing a mesa structure.

EFFECT: reducing dark current of a multi-element photodetector.

2 dwg