POWER KEY BUILT AROUND MIS-TRANSISTOR Russian patent published in 2009 - IPC H03K17/567 H03K17/691 H02M7/537 

Abstract RU 2344542 C1

FIELD: physics.

SUBSTANCE: proposed device additionally incorporates two thyristors connected antiparallel in between the secondary input and MIS-transistor gate. The thyristor control electrode with its cathode connected to the secondary input terminal is connected via the resistor to the said secondary output terminal. Note that the control electrode of the other thyristor with its cathode connected to the MIS-transistor gate is connected to the additional secondary input terminal, the additional secondary output being connected to the MIS-transistor gate.

EFFECT: increased reliability.

1 dwg

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RU 2 344 542 C1

Authors

Mikheev Pavel Vasil'Evich

Guseva Svetlana Vladimirovna

Prudkov Viktor Viktorovich

Dates

2009-01-20Published

2007-05-14Filed