FIELD: pulse engineering; contactless switching devices.
SUBSTANCE: power switch built around MIS transistor 11 incorporating transistors 1, 2 whose base-emitter junctions are shorted out by resistors 5, 6 and collector-emitter ones, by diodes 3, 4 in cut-off direction has collector of transistor 2 connected to gate of MIS transistor 11, emitters of transistors 1, 2, interconnected, and collector of transistor 1, connected to starting lead of secondary winding 9 of transformer 7, finishing lead of this winding being directly connected to source of MIS transistor 11. In addition, one more secondary winding 10 having lower transformation ratio than secondary winding 9 is newly introduced in transformer 7 and connected to bases of transistors 1, 2.
EFFECT: enhanced reliability, efficiency, and noise immunity.
1 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| FORCE KEY BUILT ON MIS-TRANSISTOR | 2004 |
|
RU2262187C1 |
| FORCE KEY ON MIS-TRANSISTOR | 2004 |
|
RU2262799C1 |
| FORCE KEY ON MIS-TRANSISTOR | 2004 |
|
RU2257668C1 |
| POWER KEY ON MIS TRANSISTOR | 2009 |
|
RU2396706C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340084C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340085C1 |
| POWER KEY FOR DTM-TRANSISTOR | 2007 |
|
RU2338316C1 |
| MIS TRANSISTOR POWER KEY | 2008 |
|
RU2390094C2 |
| POWER SWITCH BUILT AROUND MIS TRANSISTOR | 2001 |
|
RU2223596C2 |
| POWER KEY ON MDS-TRANSISTOR | 2014 |
|
RU2571719C1 |
