MIS TRANSISTOR POWER KEY Russian patent published in 2012 - IPC H03K17/56 

Abstract RU 2469473 C1

FIELD: electricity.

SUBSTANCE: MIS transistor power key is proposed, comprising a transformer, the secondary winding of which is shunted by two serially joined resistors, the end of the secondary winding of the transformer is connected directly with a source of the MIS transistor, to the gate of which a stabilitron is connected with an anode, a transistor. At the same time a diode is introduced, the anode of which is connected to the start of the secondary winding of the transformer, and the cathode - to the cathode of the stabilitron, the emitter of the transistor is connected to the point of connection of resistors, the base - to the source, and a collector - to the gate of the MIS transistor.

EFFECT: improving power key operation reliability.

1 dwg

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RU 2 469 473 C1

Authors

Mikheev Pavel Vasil'Evich

Kuzub Ekaterina Pavlovna

Dates

2012-12-10Published

2011-04-08Filed