MIS TRANSISTOR POWER KEY Russian patent published in 2010 - IPC H03K17/691 

Abstract RU 2390094 C2

FIELD: electricity.

SUBSTANCE: power key based on MIS-transistor comprises transformer, two resistors and transistor, base-emitter transition of which is shunted with a single resistor. And emitter is connected to beginning of the secondary transformer winding, end of which is connected to source of MIS-transistor, and via another resistor with transistor base there is a stabilitron introduced, which is connected in stabilising direction relative to transition of transistor base-collector.

EFFECT: improved reliability and noise immunity.

1 dwg

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RU 2 390 094 C2

Authors

Mikheev Pavel Vasil'Evich

Kvakina Anzhelika Anatol'Evna

Dates

2010-05-20Published

2008-04-14Filed