POWER KEY ON MIS TRANSISTOR Russian patent published in 2008 - IPC H03K17/691 

Abstract RU 2340085 C1

FIELD: electricity.

SUBSTANCE: power key on MIS transistor containing resistor, transistors of the same conductivity with emitter-to-base junctions bridged by diodes to close. Collector of one transistor is connected to MIS transistor switch. While collector of the other transistor is connected to input of secondary transformer winding, output of which is directly connected to MIS source. Transformer has additional secondary winding. Transistor bases are connected through resistor, and additional secondary winding is connected between transistor cathodes. Input of additional secondary winding is connected to cathode of that transistor, collector of which is connected to MIS transistor switch.

EFFECT: higher reliability and downsizing.

1 dwg

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RU 2 340 085 C1

Authors

Mikheev Pavel Vasil'Evich

Prudkov Viktor Viktorovich

Dates

2008-11-27Published

2007-06-19Filed