FIELD: pulse equipment, non-contact commutation devices.
SUBSTANCE: device uses MIS-transistor 10, including transistors 1,2 between bases of which resistor 9 is connected, and base-emitter transfers are linked by diodes 3,4 in locking direction, collector 2 is connected to gate of MIS-transistor 10, emitters 1,2 are connected, and collector 1 is connected to start of primary winding 7 of transformer 5, end of which is directly connected to source of MIS-transistor 10. also, transistor 5 additionally includes secondary winding 8 with decreasing transformation coefficient relatively to secondary winding 7, connected serially to resistor 9 and bases of transistors 1,2.
EFFECT: higher efficiency, higher resistance to interference.
1 dwg
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