FORCE KEY ON MIS-TRANSISTOR Russian patent published in 2005 - IPC

Abstract RU 2262799 C1

FIELD: pulse equipment for use in commutation devices.

SUBSTANCE: transformer 5 has additional winding, edge contacts of which are connected to bases of transistors 1 and 2, emitters of which are connected and through resistor 9 are connected to middle point of additional winding, and collector-emitter transfers are linked by diodes 3 and 4 in locking direction. Collector T 1 is connected to start of secondary winding TP 5, end of which is connected to source of MIS-transistor 10, gate of which is connected to collector T 2.

EFFECT: higher reliability, higher efficiency, higher resistance to interference.

1 dwg

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RU 2 262 799 C1

Authors

Mikheev P.V.

Sokolov M.I.

Krutskikh E.I.

Rudenko V.N.

Dates

2005-10-20Published

2004-03-04Filed