MICROWAVE PHASE SHIFTER Russian patent published in 2008 - IPC H01P1/185 

FIELD: electronic engineering; microwave phase shifters built around semiconductor devices.

SUBSTANCE: proposed microwave phase shifter has two transmission lines of equal wave impedance, one of them being designed for microwave signal input and other one, for its output, two Schottky-barrier field-effect transistors, and transmission line section whose length equals half the wavelength in transmission line. Source of Schottky-barrier field-effect transistor is connected to transmission line at input, drain, to transmission line at output and to one of transmission line section ends. Other end of transmission line section is connected to transmission line at input. Drain of second Schottky-barrier field-effect transistor is connected to transmission line section at distance equal to quarter-wavelength in transmission line from any of its ends; transistor source is grounded. Gates of Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply.

EFFECT: simplified design, reduced mass and size due to reduced number of direct-current control voltage supplies while retaining desired parameters of microwave phase shifter.

1 cl, 4 dwg