MICROWAVE PHASE CHANGER Russian patent published in 2009 - IPC H01P1/185 

FIELD: physics; conductors.

SUBSTANCE: invention relates to electronic engineering and more specifically to microwave phase changers on semiconductor devices. A microwave phase changer is proposed, which has two transmission lines with the same characteristic impedance, one meant for microwave signal input, and the other for output, a Schottky-barrier field-effect transistor, two bipolar reactive elements with different or same value. The drain of the Schottky-barrier field-effect transistor is connected to one end of one of the bipolar reactive elements, and the other end to the transmission line at the output. The source of the Schottky-barrier field-effect transistor is earthed, and direct control voltage is applied across its gate. The microwave phase changer additionally contains two transmission line sections, the first with length equal to or less than half the wavelength, and the second, with length equal to quarter wavelength. The said wavelength corresponds to the medium frequency of the operating frequency band.

EFFECT: wider operation frequency band, reduced direct losses, simplification of design and weight and size characteristics of the microwave phase changer.

3 cl, 4 dwg, 2 ex