MICROWAVE PHASE SHIFTER Russian patent published in 2008 - IPC H01P1/185 

FIELD: electrical engineering; microwave phase shifters built around semiconductor devices.

SUBSTANCE: proposed microwave phase shifter has two transmission lines of similar wave impedance ,one of them being designed for microwave signal input and other one, for its output; two Schottky-barrier field-effect transistors; inductance coils of same rating; and capacitors of either different or same rating. Source of first Schottky-barrier field-effect transistor is connected to transmission line at input and to one of first inductance coil leads; drain is connected through first capacitor to transmission line at output and to one of second inductance coil leads. Drain of second Schottky-barrier field-effect transistor is connected to other leads of both inductance coils and to one of leads of second capacitor; source and other lead of second capacitor are grounded. Gates of Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply.

EFFECT: reduced irregularity of phase variation in operating frequency band, reduced reflection factor module and direct loss; simplified design and reduced mass of microwave phase shifter.

2 cl, 5 dwg