METHOD OF CRYSTALLIZATION OF LARGE-SIZED ALLOYED GERMANIUM INGOTS IN THE FORM OF DISKS AND PLATES AND A DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2023 - IPC C30B11/04 C30B13/18 C30B29/08 C30B29/64 

FIELD: semiconductor crystals.

SUBSTANCE: essence of the invention lies in the fact that before the start of the crystallization process, namely after the melting of the charge with the ligature, the melt in the crucible is intensively mixed due to preferential heating by the bottom heater from below, which leads to the occurrence of intense natural convection with the Bernard cell structure along the entire thin layer of molten germanium when its height is much less than its diameter. This nature of the flow during several hours leads to complete mixing of the impurity, which makes it possible to begin crystallization from a melt that is completely homogeneous in composition. On the contrary, crystallization is carried out with predominant heating of the crucible with the melt from above using an OTF heater, which is constantly in contact with the melt, which excludes the occurrence of Marangoni convection, and, consequently, convection in general in such a thin layer of the melt. The solidified germanium ingot is almost completely uniform in cross section (with the exception of a few millimetres at the edges).

EFFECT: device for implementing this method is proposed, which provides in the design of the crucible an inflow in the side wall of the crucible and grooves in it, allowing the overflow of the excess melt formed during the melting of the load and solidification of the melt from the crucible into the reservoir formed by the walls of the crucible and the OTF heater, providing constant contact with the melt.

2 cl, 9 dwg, 3 ex