SEMICONDUCTOR PHOTOELECTRIC GENERATOR AND METHOD OF MAKING IT Russian patent published in 2009 - IPC H01L31/04 H01L31/18 

FIELD: electrical engineering.

SUBSTANCE: present invention relates to electronics, particularly to devices which convert energy of electromagnetic radiation to electrical energy, and to the technology of making them, more specifically to semiconductor photoelectric generators. The semiconductor photoelectric generator has a substrate, semiconductor layers, antireflection coating and metal contacts. According to the invention, at the front of the generator there are several deposited layers, forming diode pairs of flat n⁺-p-p⁺ or p⁺-n-n⁺, or n-p structures, connected in series in the direction of radiation propagation. One or two linear dimensions of each diode structure do not exceed the diffusion distance of minority carriers in the base region. The thickness of the diode structure in the direction of radiation propagation is inversely proportional the maximum radiation absorption coefficient of the semiconductor material. Proposed is also a method of making the photoelectric generator described above.

EFFECT: higher output voltage and more efficient conversion of concentrated radiation.

5 cl, 2 dwg