SEMICONDUCTOR PHOTOELECTRIC GENERATOR (VERSIONS) Russian patent published in 2013 - IPC H01L31/42 

FIELD: electricity.

SUBSTANCE: semiconductor photoelectric generator with double-sided working surface is made as a matrix from switched microphoto cells with n⁺-p-p⁺(p⁺n-n⁺) diode structures, in which one or two linear dimensions of the microphoto cell are comparable with diffusion length of minor current carriers in the base area, and planes of diode structures are inclined at the angle φ, 30°<φ<150° to the working surface of the generator, along the entire area of the working surface at two sides of the generator there is a passivating film with thickness of 10-60 nm, arranged on the basis of one or two oxides of the following metals: tantalum, zinc, aluminium, molybdenum and tungsten, and above the passivating film there is a layer of a clearing coating. In the other version along the entire area of the working surface of the generator at two sides of the generator there are passivating and clearing films, made on the basis of one or two oxides of the following metals: tantalum, zinc, aluminium, molybdenum and tungsten, and also silicon nitride or carbide.

EFFECT: increased efficiency of a photoelectric generator and increased efficiency of electromagnetic radiation conversion.

4 cl, 2 dwg, 2 ex