SEMICONDUCTOR PHOTOELECTRIC GENERATOR (VERSIONS) Russian patent published in 2008 - IPC H01L31/42 B82B1/00 

Abstract RU 2336596 C1

FIELD: physics, phototechnics.

SUBSTANCE: invention concerns electronic technics, particularly devices converting electromagnetic emission energy into electric energy, and technologies of their manufacturing, particularly semiconductor photoelectric generators. Semiconductor photoelectric generator takes form of a matrix of commuted microphotoconverters with one or two linear dimensions comparable to diffusion length of secondary current carriers in base area; p-n transition planes are perpendicular to working surface of generator; microphotoconverter surface free of n-p transitions carries a 10-30 nm thick insulating film with 10-40 nm metal clusters positioned on it at 60-120 nm distance from each other; and dielectric layer of passivating antireflection coating is laid over nanoclusters. Two more embodiments of photoelectric generator are claimed.

EFFECT: improved efficiency of photoelectric generator and electromagnetic radiation conversion for single emission.

3 cl, 4 dwg

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RU 2 336 596 C1

Authors

Strebkov Dmitrij Semenovich

Shepovalova Ol'Ga Vjacheslavovna

Zaddeh Vitalij Viktorovich

Dates

2008-10-20Published

2007-04-11Filed