SOLAR CELL WITH BUILT-IN PROTECTIVE DIODE Russian patent published in 2009 - IPC H01L31/304

Abstract RU 2358356 C2

FIELD: physics; semiconductors.

SUBSTANCE: proposed solar cell contains photoactive semiconductor layers between front and rear contacts, with an integrated protective diode (shunt diode) with polarity opposite the solar cell and a p-conducting semiconductor layer passing through the front side. The protective diode is connected to the front contact. To provide for high stability of the protective diode, in particular to prevent migration of metal atoms, a tunnel diode (38) should pass through the p-conducting semiconductor layer (36) of the protective diode (32), which through the n⁺-layer can be connected to the front contact (14).

EFFECT: provision for high stability of the protective diode.

11 cl, 2 dwg

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RU 2 358 356 C2

Authors

Shtrobl' Gerkhard

Dates

2009-06-10—Published

2005-05-10—Filed