CASCADE PHOTOCONVERTER AND METHOD OF MAKING SAID PHOTOCONVERTER Russian patent published in 2010 - IPC H01L31/304 

FIELD: physics; semiconductors.

SUBSTANCE: according to the invention, the cascade photoconverter has an epitaxial structure, a rear metal contact and a front metallic contact grid, as well as an antireflecting coat. The epitaxial structure includes the following, grown successively using organo-metal compoung method - hybrid wafer epitaxy p-Ge nucleation layer n-Ga_0.51In_0.49P with thickness of 170-180 nm, buffer layer Ga_0.99In_0.01As with thickness of not less than 0.5 mcm, lower tunnel diode which includes a n-Al_0.53In_0.47P or n-AlGalnP layer with thickness of 30-50 nm, a n⁺⁺-GaAs layer with thickness of 20-30 nm, a p⁺⁺-AlGaAs layer with thickness of 20-30 nm, and a wide-band gap p-Al_0,53In_0,47P layer with thickness of 20-50 nm or a n-AlGalnP layer with thickness of 30-50 nm, a middle junction which includes a rear potential barrier, base p-Ga_0.99ln_0.01As and emitter n-Ga_0,99In_0,01As layers deposited at temperature 595-605°C and a wide-band gap "window" layer made from n-AlGaAs or n-Ga_0.51In_0.49P with thickness of 30-120 nm, a top tunnel diode which includes a n⁺⁺-Ga_0.51In_0.49P or a n⁺⁺-GaAs layer with thickness of 10-20 nm and a p⁺⁺-AlGaAs layer with thickness of 10-20 nm, a top element grown at temperature 720÷730°C and including a p⁺-layer of a rear potential barrier, a base p-layer with thickness of 0.35-0.70 mcm, an emitter n-layer made from Ga_0.51In_0.49P and an n-layer of a wide-band gap window as well as an n⁺-contact layer.

EFFECT: design of cascade photoconverters which increase short circuit current of separate junctions, increase open circuit voltage and current-voltage curve fill factor, as well as increased efficiency.

25 cl, 11 dwg, 3 ex