FIELD: physics.
SUBSTANCE: invention relates to semiconductor photoconverters, particularly concentrator multistage solar cells which convert concentrated solar radiation into electrical energy. The concentrator multistage photoconverter has a substrate (1) p-Ge, in which is formed a lower p-n junction (2), and, successively grown on the substrate, a nucleation layer (3) n-Ga0.51In0.49P, a buffer layer (4) n-Ga0.99In0.01As, a lower tunnel diode (5), a middle p-n junction (9), having a base layer (10) an emitter layer (11), as well as a wide-band gap window (12), an upper tunnel diode (13), an upper p-n junction (14), having a rear potential barrier layer (15), a base layer (16) and emitter layer (17), as well as a wide-band gap window (18), and a contact n+-sublayer (19) The lower tunnel diode has an n-wide band gap layer (6), an n++-tunnel layer (7) and a p++-tunnel layer (8), directly adjacent to the base layer (10) of the middle p-n junction (9).
EFFECT: invention reduces series resistance of the concentrator multistage photoconverter in order to increase efficiency of converting highly concentrated solar radiation.
5 cl, 7 dwg
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Authors
Dates
2014-05-10—Published
2012-10-01—Filed