MULTIJUNCTION SOLAR CELL Russian patent published in 2015 - IPC H01L31/04 

FIELD: power engineering.

SUBSTANCE: multijunction solar cell comprises a substrate p-Ge (1), where a lower p-n junction (2) is created, and the following serially grown layers on the substrate: a nucleation layer (3) n-Ga_0.51In_0.49P, a buffer layer (4) n-Ga_0.99In_0.01As, a lower tunnel diode (5), a middle p-n junction (6), comprising a layer of a rear potential barrier (7), a base (9) and an emitter (11) layers, and also a wide-zone window (12), an upper tunnel diode (13), an upper junction (14), comprising a layer of a rear potential barrier (15), a base (16) and an emitter (17) layers, and also a wide-zone window (18), and a contact n⁺-sublayer (19). The base layer (9) of the middle p-n junction (6) includes serially grown the area of alternating alloying (8), adjoining directly the layer of the rear potential barrier (7) of the middle p-n junction (9) and the area (10) of permanent alloying.

EFFECT: invention provides for increased collection of carriers from a base layer of a middle p-n junction GaInP/GaInAs/Ge of a multijunction solar cell, which is expressed in increase of its photocurrent and efficiency factor of the entire element as a whole.

5 cl, 2 dwg, 1 ex