SEMICONDUCTOR STRUCTURE WITH ACTIVE ZONE (ALTERNATIVES) Russian patent published in 2008 - IPC H01L33/00 

FIELD: lighting; light control.

SUBSTANCE: invention pertains to a semiconductor structure with an active zone, such as a light-emitting diode or photodiode (10, 16, 24, 26, 36, 46, 54, 68, 74, 80), consisting of a substrate (SUB) with at least, two active zones (AZ1-AZn), each of which emits or absorbs radiation of different wave length. According to the invention, a multi-wave diode can be obtained, whose first (lower) active zone (AZ1) is grown of the surface of the substrate (SUB), one or more extra active zones (AZ1 - AZn) epitaxially grown one on top of the other. In that case, active zones (AZ1 - AZn) are joined in series from the lower active zone (AZ1) to the upper active zone (AZn) through tunnel diodes (TD1-TDn), serving as low resistance resistors.

EFFECT: invention allows for perfecting a semiconductor structure with active zones, in such a way that, there is matching of intensity of the emitted light with the corresponding active zone.

32 cl, 12 dwg