PHOTOCONVERTER Russian patent published in 2009 - IPC H01L31/352 

FIELD: physics, semiconductors.

SUBSTANCE: invention is related to the field of production of solid-state photosensitive semiconductor instruments, namely - to the field of production of light power converters into electric current, and may be used in manufacturing of specified instruments. Photoconverter comprises substrate with the fields of p- and n-type of conductivity that create p-n-transition, and strip ohm contacts connected to p-n-transition on front surface. At that photoconverter comprises in near-surface layer from the side of front surface combination of parallel connected p-n-transitions, total area of which is less than area of front surface, and distance between neighboring p-n-transitions that is less than substrate thickness. Suggested invention provides for increased voltage of idle run of photoconverter.

EFFECT: increased voltage of photoconveter idle run.

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