SEMICONDUCTOR PHOTOCONVERTER (VERSIONS) AND METHOD FOR ITS MANUFACTURING Russian patent published in 2010 - IPC H01L27/142 B82B1/00 B82B3/00 

FIELD: electricity.

SUBSTANCE: semiconductor photoconverter contains base area made of p- or n-type semiconducting material, diode structures with n⁺-p (p⁺-n) junctions on working surface and isotype p-p⁺ (n-n⁺) junctions on the opposite surface. Junction surfaces are parallel to working surface, p⁺-n (n⁺-p) junctions are made as separate segments commuted using contacts to doped layer. Distance between p⁺-n (n⁺-p) junctions does not exceed double diffusion length of minority carriers in the base area. At the same time, photoconverter on the working surface in the base area contains isolated areas with additional isotopic p-p⁺ (n-n⁺) junctions which are embedded between two adjacent segments with p⁺-n (n⁺-p) junctions. Planes of additional isolated isotype junctions are parallel to working surface. Above additional isotype junctions there are contact strips which are isolated from additional isotype junctions by passivating oxide film and connected by isolated from base area contact strip with contact to doped layer of diode structures. Base area segments without contacts contain passivating antireflection film.

EFFECT: invention allows for increase in effectiveness of high radiation flux conversion.

12 cl, 6 dwg