PHOTOELECTRIC CONVERTER (VERSIONS) AND METHOD OF MAKING SAID CONVERTER Russian patent published in 2009 - IPC H01L31/42 B82B1/00 B82B3/00 

FIELD: physics.

SUBSTANCE: semiconductor photoconverter has on the working surface an antireflection coating, diode structure with a n⁺-p (p⁺-n) junction, isotype p-p+ (n-n⁺) junction in the base region on the back surface, metal contacts to both regions of the diode structure. Thickness of the base region is comparable to the diffusion distance of minority carriers in the base region. The diode structure is made in separate sections, connected by metal contacts. Distance between separate neighbouring diode structures is not greater than twice the diffusion distance of minority carriers in the base region. Width of the diode structures is 10 to 30 times less than the distance between neighbouring diode structures. On sections of the working surface under the antireflecting coating which are free from the diode structures, there is a 10 to 30 nm passivating, dielectric film on which nanoclusters are deposited. Also proposed is one more version of making a semiconductor photoconverter and a method of making the said semiconductor photoconverter.

EFFECT: increased efficiency and reduced cost of making the photoconverter.

5 cl, 3 ex, 3 dwg