SEMICONDUCTOR PHOTOCONVERTER AND METHOD OF MAKING SAID PHOTOCONVERTER Russian patent published in 2011 - IPC H01L27/142 H01L31/18 

FIELD: physics.

SUBSTANCE: invention relates to design and technology of making optoelectronic devices and specifically to photoelectric converters. The semiconductor photoconverter has a working surface on which radiation is incident, a base area made in form of a plate of p- or n-type semiconductor material and doped layers with high n⁺- and p⁺-conductivity, lying on two sides of the plate, contacts to said doped layers and antireflection coating on the working surface. On the surface of the base area free from n⁺- and p⁺ doped layers, there are micro-depressions, one, two or three linear dimensions of which are comparable to a quarter of the radiation wavelength, corresponding to maximum spectral density of the radiation. Parts of the base area between the micro-depressions have doped layers whose surface is covered with metal contacts. The width of the doped layers and contacts between the micro-depressions is equal to 5-10 nm. The micro-depressions have antireflecting coating with passivating properties with the following parameters: radiation absorption coefficient 0.94-0.99, rate of effective surface recombination of 1-20 cm/s. Disclosed also is a method of making said photoconverter.

EFFECT: invention provides high efficiency of converting intense radiation streams.

6 cl, 4 dwg,1 ex