FIELD: physics.
SUBSTANCE: semiconductor photo converter comprises sections with n+-p or (p+-n) junction and n+ or (p+) layers completely covered by metal contacts, and p- or n-conductivity basic region on photo sensitive surface with applied passivating clarifying film. N+-p or (p+-n) junction represents a hetero junction with wide-band n+ or (p+) layer and has multiple intermittent sections with 0.1-30 mcm width. 10-300 mcm-wide gaps between micro sections comprise basic region with the rate of surface recombination below 200 cm/s. Note here that distance between n+-p (p+-n) junction levels and photo sensitive surface does not exceed 50 mcm while micro section width is smaller than said gaps, at least, 10 times. Invention covers also one more version of photo converter design and two versions of its fabrication.
EFFECT: higher efficiency and reduced production costs.
28 cl, 6 dwg
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