SEMICONDUCTOR DEVICE, IMAGE GENERATION, DEVICE OF IMAGE GENERATION AND METHOD TO CONTROL SEMICONDUCTOR DEVICE OF IMAGE GENERATION Russian patent published in 2013 - IPC H04N5/335 

FIELD: electricity.

SUBSTANCE: pixel management is carried out, using electrons as a signal charge, the level of negative voltage in each control signal arranged as capable of pulse control of transistors in the pixel is controlled so that the longer is the time of charge accumulation, the higher is the voltage level. Preferably the level of negative voltage has the "ground" level (GND), when the signal charge is not accumulated. The level of negative voltage increases only in case of long-term accumulation of charge, and this is the case, when the dark current related to leakage phenomenon becomes an issue. Therefore it becomes possible to reduce the load at pixels and an oxide film of a gate of their control circuits and to reduce degradation of transistor characteristics, even with suppression of the dark current.

EFFECT: provision of compatibility between suppression of dark current caused by leakage phenomenon and provision of element reliability in a semiconductor device of image generation of CMOS type.

16 cl, 13 dwg