PULSE INJECTION LASER Russian patent published in 2019 - IPC H01S5/32 

FIELD: physics.

SUBSTANCE: pulsed injection laser comprises a separate restriction heterostructure, comprising an asymmetric multimode waveguide, limiting layers (3), (8) of which simultaneously are emitters of n- and p-type conductivity with identical refraction indices, active region (6) consisting of at least one quantum-size active layer, optical facets (11), (13), ohmic contacts (2), (10) and an optical resonator formed by optical facets (11), (13). Waveguide region on the side of emitter (3) of n-type conductivity consists of two layers (4), (5) of semiconductor material, having the same refraction index. First layer (5) adjacent to active region (6) has doping level N₁ cm^-3, and thickness d₁, mcm, satisfying certain ratios. Second layer (4) adjacent to emitter (3) of n-type conductivity has level of doping not more than background level of doping and thickness d₂ = (d_total-d₁).

EFFECT: technical result consists in enabling increase in maximum peak power with simultaneous reduction of radiation spectrum width.

1 cl, 3 dwg