INJECTION LASER Russian patent published in 2016 - IPC H01S5/32 

FIELD: lasers.

SUBSTANCE: application: for semiconductor injection lasers. Summary of invention consists in fact that injection laser based on semiconductor heterostructure separate limitation, including multimode waveguide, first and second high band gap limiting layers, which are simultaneously respectively emitters of p-and n-type conductivity and located on both sides of multimode waveguide, active region, located in multi-mode waveguide and consisting of at least one quantum-dimensional active layer, ohmic contacts and optical resonator, between multimode waveguide and one of first and second wideband limiting layers includes first single-mode waveguide and first additional wide band gap limiting layer, wherein first additional wide band gap limiting layer is located between multimode waveguide and the first single-mode waveguide, optical limiting factor for the active region of one of its own m-mode (m is integer) multimode waveguide satisfies following ratio, and thickness of P₁, nm, of first additional wide band gap of restricting layer, effective refraction index N_d of first single-mode waveguide natural mode and minimum value of n_s of effective refraction index of characteristic modes multimode waveguide satisfy also presented by relationships.

EFFECT: technical result is possibility to produce injection laser with reduced divergence of laser beam and increased thickness of waveguide with preservation of laser generation on transverse mode.

5 cl, 14 dwg