INJECTION LASER Russian patent published in 2012 - IPC H01S5/65 H01S5/32 H01S5/42 

FIELD: physics.

SUBSTANCE: heterostructure-based laser has a waveguide layer enclosed between wide-gap emitters with p and n conductivity type, which are simultaneously bounding layers, an active region consisting of quantum size active layer, an optical Fabry-Perot resonator and a strip ohmic contact with an injection region underneath. In the waveguide layer outside the injection region there is a doped region, where the optical limiting factor of the closed mode in the doped region and concentration of free charge carriers in the doped region satisfy the relationship: where: is the value of the component of the optical limiting factor G_Y in the amplification region for the closed mode, arbitrary units; is the mode loss at the output of the Fabry-Perot resonator, cm^-1; α_i is loss due to absorption on free charge carriers in the amplification region, cm^-1; Δα denotes losses associated with closed mode radiation scattering on irregularities (α_SC), inter-band absorption (α_BGL) and absorption on free charge carriers in lateral parts of the injection laser, cm^-1; is the closed mode optical limiting factor in the doped region, arbitrary units; n, p denote concentration of free electrons and holes in the doped region, respectively, cm^-3; σ_n, σ_p denote the absorption cross-section on free electrons and holes in the doped region, respectively, cm².

EFFECT: high optical power output in both continuous and pulsed modes of current pumping, high stability of the output optical power.

13 cl, 5 dwg