FIELD: physics.
SUBSTANCE: filtering elements is manufactured by ion-plasma cathode sputtering by any of these metals Ti, Zr, Hf, Cr, Al, Cu, Ni, Nb, their alloys or stainless steel onto porous polymer substrate. Substrate is placed on rotating device in processing chamber. After pumping-out of processing chamber up to pressure of (4-6)·10-5 mm Hg it is filled with argon up to pressure of (1-4)·10-4 mm Hg and treatment by low-temperature plasma is done at discharge current of 40-50 A during 30-40 minutes at temperature of -50-+150°C. Leaving source of low-temperature plasma on metal sputtering is carried out in the same temperature range. The whole process is implemented at constant substrate cooling by means of cooling medium circulation through intracavity of rotating device. Rotating device is made in the form of cylinder with rotating gear and membrane tensioner at external surface of cylinder. Cylinder is hollow and equipped with cooling system.
EFFECT: cost saving, improvement of process.
1 dwg, 1 tbl, 1 ex
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Authors
Dates
2009-07-20—Published
2007-10-22—Filed