FIELD: technological processes.
SUBSTANCE: invention is related to technology of semiconductor instruments manufacture. Method for etching of aluminium film includes etching of aluminium film from the surface of siliceous plates by means of their processing in etchant, which contains nitric, phosphorous and acetic acids at the ratio of components that is accordingly equal to 1:50:12 at temperature of 40±5°C, for 15±5 minutes, at that difference in aluminium thickness layer makes 4.5÷5.0%.
EFFECT: provision of smooth profile relief and reduced time and temperature of etching.
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