METHOD OF DETECTING EPITAXIAL DISLOCATION DEFECTS Russian patent published in 2010 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: method of detecting epitaxial dislocation defects involves etching the surface of silicon wafers in a selective etchant consisting of the following components: nitric acid (HNO₃), hydrofluoric acid (HF) and acetic acid (CH₃COOH) in ratio of 5:1:15, at temperature of 293 K and etching time of 145±5 minutes, wherein the number of flashing dots is equal to 5 and the total number of dislocation defects is equal to 550±50 items/cm².

EFFECT: invention enables to obtain an even and an uninterrupted surface of silicon wafers and shorter duration of the process.