METHOD OF MAKING CASCADE SOLAR CELLS (VERSIONS) Russian patent published in 2010 - IPC H01L31/18 

Abstract RU 2391745 C1

FIELD: physics.

SUBSTANCE: method of making solar cells involves making a top solar cell based on a multilayer semiconductor layer of GalnP/Ga(ln)As/Ge, partial local etching of a germanium substrate on the rear side under the photosensitive area of the semiconductor plate, or complete etching of the germanium substrate of the top solar cell and mechanical docking with the bottom solar cell based on a semiconductor plate of InAs or GaSb/GaAISb. Partial local etching of the germanium substrate is carried out through a photoresist mask through electrochemical etching.

EFFECT: increased efficiency of solar cells due to more efficient conversion of the solar spectrum and reduced optical losses when infrared radiation passes through the substrate of the top solar cell.

18 cl, 5 dwg, 12 ex

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RU 2 391 745 C1

Authors

Andreev Vjacheslav Mikhajlovich

Il'Inskaja Natal'Ja Dmitrievna

Kaljuzhnyj Nikolaj Aleksandrovich

Lantratov Vladimir Mikhajlovich

Malevskaja Aleksandra Vjacheslavovna

Mintairov Sergej Aleksandrovich

Dates

2010-06-10Published

2009-01-23Filed