FIELD: microelectronics. SUBSTANCE: upon removal of photoresist, Tiw film is subjected to incomplete etching by plasma through two thirds of layer thickness. Then layer is fully etched in hydrogen peroxide and acetic acid solution in 1:1 proportion at temperature of 40-45 C. EFFECT: improved reliability of semiconductor devices. 2 cl, 2 tbl
Title | Year | Author | Number |
---|---|---|---|
PROCESS OF SELECTIVE ETCHING OF SILICON-CONTAINING LAYER IN MULTILAYER STRUCTURES | 0 |
|
SU1819356A3 |
PHOTOELECTRIC TRANSDUCER MANUFACTURING METHOD | 2002 |
|
RU2219621C1 |
METHOD OF PRODUCING VERTICALLY EMITTING LASER WITH INTRACAVITY CONTACTS AND DIELECTRIC MIRROR | 2016 |
|
RU2703938C1 |
METHOD FOR MAKING A PHOTO-TRANSFORMER | 2005 |
|
RU2292610C1 |
METHOD OF MAKING MULTILAYER PHOTOCELL CHIPS | 2012 |
|
RU2492555C1 |
PHOTOELECTRIC CONVERTER MANUFACTURING PROCESS | 2003 |
|
RU2244986C1 |
METHOD OF MAKING MULTILEVEL METALLISATION OF INTEGRATED MICROCIRCUITS WITH POROUS DIELECTRIC LAYER IN GAPS BETWEEN CONDUCTORS | 2011 |
|
RU2459313C1 |
PROCESS OF MANUFACTURE OF INTEGRATED MICROCIRCUITS WITH SCHOTTKY DIODES HAVING DIFFERENT HEIGHT OF POTENTIAL BARRIER | 1988 |
|
SU1589932A1 |
METHOD FOR MANUFACTURING OF IMPROVED MULTILEVEL COPPER METALLISATION USING DIELECTRICS WITH ULTRA LOW DIELECTRIC CONSTANT (ULTRA LOW-K) | 2011 |
|
RU2486632C2 |
METHOD TO MANUFACTURE MULTI-LEVEL INTERCONNECTIONS OF INTEGRAL MICROCIRCUIT CHIPS WITH AIR GAPS | 2010 |
|
RU2436188C1 |
Authors
Dates
1995-11-27—Published
1989-08-28—Filed