FIELD: chemistry.
SUBSTANCE: highly pure silicon is obtained through thermal decomposition of a silane-containing mixture in gaseous phase with deposition of a compact silicon layer. The gas mixture used contains monosilane, monochlorosilane and, if desired, other silanes.
EFFECT: obtaining highly pure silicon with reduced formation of fine dust.
12 cl, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING HIGH-PURITY MONOSILANE AND SILICON TETRACHLORIDE | 2011 |
|
RU2457178C1 |
| DEVICE AND METHOD OF PRODUCING SILANES | 2005 |
|
RU2403079C2 |
| CATALYST AND METHOD OF DISMUTATION OF HYDROGEN-CONTAINING HALOSILANES | 2008 |
|
RU2492924C9 |
| METHOD FOR DEEP PURIFICATION OF MONOSILANE | 2014 |
|
RU2593634C2 |
| METHOD OF PREPARING SILANES | 1998 |
|
RU2152902C2 |
| COLUMN AND METHOD FOR DISPROPORTIONATION OF CHLOROSILANES TO MONOSILANE AND TETRACHLOROSILANE AND INSTALLATION FOR PRODUCING MONOSILANE | 2016 |
|
RU2681016C1 |
| METHOD AND SYSTEM FOR OBTAINING PURE SILICON | 2009 |
|
RU2503616C2 |
| METHOD OF MONOSILANE PRODUCTION | 2006 |
|
RU2403964C2 |
| 0 |
|
SU1782936A1 | |
| METHOD OF PRODUCING CHLOROSILANES, METHOD OF CHLORINATING SILICON DIOXIDE-CONTAINING MATERIAL AND METHOD OF CONVERTING TETRACHLOROSILANE TO TRICHLOROSILANE | 2008 |
|
RU2373147C1 |
