SUBSTRATE FOR GROWING EPITAXIAL LAYERS OF GALLIUM ARSENIDE Russian patent published in 2013 - IPC C30B25/18 C30B19/12 C30B29/10 C30B29/42 

FIELD: chemistry.

SUBSTANCE: invention involves use of substrates made from intermetallic compounds to grow epitaxial layers of GaAs, said compounds having a strict stoichiometric composition, and specifically from gallium lanthanides GaLa₃ and Ga₃La₅, gallium zirconides Ga₃Zr and Ga₃Zr₅, aluminium zirconide Al₃Zr, aluminium ceride CeAl₂, palladium beryllide BePd, magnesium lanthanide MgLa, aluminium lanthanide Al₂La, platinum stannide Pt₃Sn, indium lanthanide InLa, tin zirconide SnZr₄, platinum plumbide Pt₃Pb.

EFFECT: invention enables to significantly improve electrophysical parameters of gallium arsenide by preventing diffusion of substrate components into the epitaxial layer.

1 tbl