FIELD: technological processes.
SUBSTANCE: invention relates to the field of production of sprayed metal targets for microelectronics. Method for production of sprayed target on the basis of highly pure transition metal from the following range: titanium, vanadium, cobalt, includes serial deep vacuum refining of highly pure metal-ceramic stock by electronic beam drop remelting to produce bar of highly pure transition metal, formation of target stock in the form of bar by arc vacuum remelting with simultaneous alloying with silicon within the limits of 0.0005-0.15 wt % in vertical crystalliser in process of intense electromagnet mixing of hardening melt, and further produced stock is mechanically treated. Sprayed target of highly pure alloy on the basis of transition metal from the following range: titanium, vanadium, cobalt, contains transition metal and silicon, at the following ratio of specified components, wt %: silicon - 0.005-1.0 and metal from the following range: titanium, vanadium, cobalt - the rest.
EFFECT: improved quality and reliability of barrier and conducting films of disilicides of refractory metals.
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