FIELD: electric engineering.
SUBSTANCE: invention is related to electric engineering and may be used to ionise atomic or molecular flows and generation of ion beams in semiconductor technology in the field of molecular-beam epitaxy. Method of ionisation includes multiple bombardment of atoms or molecules with accelerated electrons. Flow of ionised atoms or molecules passes inside anode, along its axis. Multiple bombardment by electrons is carried out in transverse direction due to helical cathode that surrounds anode. Anode is made in the form of cylinder from metal mesh for free passage of atoms or molecules and electrons through it. Electrons multiply pass through ionisation field, being reflected from border of area defined by potential barrier created by anode-cathode difference of potentials. Acceleration of ions takes place in short section due to anode potential and is realised with the help of accelerating mesh installed above anode and being under zero potential.
EFFECT: higher efficiency and homogeneity of ionisation due to increased number of electron collisions with ionised atoms or molecules, increased homogeneity of electron density distribution in ionised volume, reduced dispersion in electron energies due to creation of narrow zone for their acceleration between two equipotential volumes.
7 cl, 1 dwg, 3 ex
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Authors
Dates
2009-10-20—Published
2008-06-18—Filed