METHOD OF DETERMINING VALUES OF THERMOELECTROPHYSICAL PARAMETRES OF TEST SAMPLES OF CONDUCTING OR RESISTIVE STRUCTURES Russian patent published in 2009 - IPC G01R31/28 G01N27/00 

FIELD: physics.

SUBSTANCE: invention can be used in designing efficient methods and devices for determining or nondestructive evaluation of values of thermoelectrophysical parametres and electrophysical diagnosis of conducting or resistive structures of integrated circuits (IC). A periodic sequence of pairs of rectangular video pulses of current I_V1 and I_V2 is applied onto a test sample of a nonpolar conducting or resistive structure. |I_V1| = |I_V2|, τ_V1 = τ_V2, Q_V1 - Q_V2 = τ_p/τ_V2 = τ_p/τ_V2 > 2, where, τ_V1 and τ_V2 - are durations of video pulses I_V1 and I_V2 respectively, τ_p - is their period, Q_V1 and Q_V2 - is pulse ratio of video pulses I_V1 and I_V2 respectively. Video pulse I_V2 starts right at the end of video pulse I_V1 and has an opposite sign to the sign of video pulse IV1. Values of thermoelectrophysical parametres are determined using results from measuring the informational voltage component of the constant component of the response signal, arising from fluctuation of temperature and resistance of the conducting or resistive films of the sample during period τ_p.

EFFECT: increased sensitivity and reliability with significant suppression of the response signal component, characteristic of fast-response non-polar two-terminal networks.

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