FIELD: metallurgy.
SUBSTANCE: invention elates to technology of carbon-bearing protective coats by thermal decomposition of organic-siloxane compositions and can be used in planar technology of solid-state electronics, and also can be used in litographic processes at forming of organic-siloxane actinoresists and carbon-bearing masking coatings on its basis for manufacturing of photomasks or other etching of planar structures. On substratum there are precipitated organic-siloxanes in the form of thin organic-siloxane film with atomic ratio of silicon and carbon, equal to 1.0:(1.0÷4.0), after sedimentation it is implemented annealing at temperature 450÷650°C in inert atmosphere at moisture load by dew point not higher than minus 60°C with isolation during 120÷30 min. In particular cases of invention implementation sedimentation of organic-siloxanes on surface of substratum is implemented by centrifugation of organic-siloxane oligomers from solutions, or thermal vacuum sputtering of organic-siloxane oligomers, or from steam and gas or liquid phase of organic-siloxane monomers, or actinolitegraphy with receiving of organic-siloxane film in the form of solid, even layers or in the form of masking coating.
EFFECT: there is simplified method of receiving of durable and homogeneous carbon-bearing coatings of thickness 0,08÷0,47 micrometres with specific resistance 20÷160 Ohm·cm and plasma etching velocity by argon ions 0,09÷0,11 nm/s.
5 cl, 1 tbl, 11 ex
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Authors
Dates
2009-11-27—Published
2008-04-30—Filed