METHOD TO MANUFACTURE SCHOTTKY DIODE Russian patent published in 2013 - IPC H01L21/329 

FIELD: electrical engineering.

SUBSTANCE: according to the Schottky diode manufacture method, the prepared and polished substrate of synthetic diamond monocrystal with high degree of doping with boron prior to sedimentation of diamond film with low degree of doping with boron is additionally subjected to an ion plasma etching operation for removal of a surface layer minimum 10 mcm thick. After diamond film sedimentation, the obtained epitaxial layered diamond structure is annealed. Reduction of diode voltage drop downstream is conditioned by decreased thickness of the transit area close to the substrate-film boundary and removal of hydrogen admixture from the structure. Increased breakdown voltage and reduced leak currents are achieved through formation of a protective structure in the form of a special profile expanded electrode. For this purpose, a protective dielectric layer is formed on several serially applied dielectric layers differentiating by the rate of etching in the process of window formation by way of lithography which results in formation of an expanded electrode with the angle of the electrode wall slope relative to the diamond film plane being less than 20°.

EFFECT: invention enables creation of a highly efficient diode with a Schottky barrier based on synthetic diamond with a high breakdown voltage value, a small leak current value and a low voltage drop downstream.

7 cl, 2 dwg