HETEROSTRUCTURE FOR PHOTOCATHODE Russian patent published in 2008 - IPC H01J1/35 B82B1/00 

Abstract RU 2335031 C1

FIELD: physics.

SUBSTANCE: invention may be used in structures of photocathode in optoelectronic systems, secondary emission photocells, detector modules of ionising radiations, systems of images recognition, etc. According to invention, in heterostructure for photocathode that contains diamond layer of p-type conductivity with nanodimensional topological irregularities on its surface, as nanodimensional topological irregularities auto-emissive diamond points or diamond crystalline nanoparticles are used that are regularly positioned, surface of layer, except for the said irregularities, being covered with conducting amorphous carbon or nanocarbide film. Heterostructure may be installed on wafer, in which cavity is provided.

EFFECT: possibility to obtain efficient photocathodes with expanded spectral area of radiation reception on the basis of suggested heterostructure, at that obtained photocathodes being resistant to thermal and radiation loads.

2 cl

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RU 2 335 031 C1

Authors

Il'Ichev Ehduard Anatol'Evich

Poltoratskij Ehduard Alekseevich

Rychkov Gennadij Sergeevich

Negodaev Mikhail Aleksandrovich

Nemirovskij Vladimir Ehduardovich

Dates

2008-09-27Published

2006-11-17Filed