FIELD: chemistry.
SUBSTANCE: invention relates to the technology of making power silicon transistors, specifically to methods of treating carbide-silicon pipes used in high-temperature processes in diffusion furnaces. Impurities are removed from carbide-silicon pipes by using a solution containing hydrofluoric acid HF, hydrochloric acid HCl and deionised water H2O in ratio of 1:1:3.5. Treatment time is 20±5 minutes. At the end of treatment, the pipes are washed in deionised water at room temperature for 30±5 minutes. Quality of treatment is determined using indicator paper.
EFFECT: complete removal of different impurities and contaminants.
3 ex
| Title | Year | Author | Number |
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