METHOD OF CLEANING CARBIDE-SILICON PIPE Russian patent published in 2014 - IPC H01L21/306 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of production of power silicon transistors, in particular to methods of processing a carbide-silicon pipe, applied for high-temperature processes in diffusion furnaces. In the method of the carbide-silicon pipe processing cleaning of the carbide-silicon pipe is carried out in a solution, consisting of ammonium bifluoride - NH₄HF₂, hydrochloric acid - HCl and de-ionised water- H₂O in a ratio of 1:1.5:4, respectively. The duration of processing constitutes 10±7 minutes. After the processing is finished, the pipe is washed in de-ionised water at room temperature for 30 minutes.

EFFECT: invention provides the reduction of duration and the process simplification, complete removal of soiling.