FIELD: physics.
SUBSTANCE: invention relates to methods of treating equipment used in oxidation and diffusion processes in production of semiconductors. The method involves treating the equipment with a solution consisting of ammonium fluoride, hydrogen fluoride and deionised water with components in the ratio 18 : 2.5 : 1, at room temperature for 20±10 minutes, subsequently washing with dionised water for 30±10 minutes.
EFFECT: complete removal of residues of acids and different impurities from the surface of silicon equipment and shorter duration of the process.
3 ex
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