FIELD: physics; conductors.
SUBSTANCE: invention relates to the technology of making power silicon transistors, specifically to methods of processing silicon crystals. In the method of processing silicon crystals, the said crystals are processed in an etching agent after high temperature processes, where the etching agent consists of nitric acid HNO3, hydrofluoric acid HF and acetic acid CH3COOH, with components in ratio of 3:2:8, temperature of the solution of 25°C, and duration of processing of 8±2 minutes. At the end, the crystals are washed in deionised water at room temperature for 25±5 minutes. Percentage yield of crystals is 98%.
EFFECT: invention provides for complete removal of different impurities and pollutants, cuts on time and temperature of processing.
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