METHOD FOR TREATMENT BEFORE SPRAYING OF TITANIUM-GERMANIUM (Ti-Ge) Russian patent published in 2022 - IPC H01L21/306 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a technology of manufacture of silicon transistors, in particular to methods for treatment of a backside before spraying. The method for treatment of a surface of plates before spraying of titanium-germanium (Ti-Ge) includes treatment of the surface of silicon plates before spraying on the backside of the plate, the treatment is carried out by etching, while, as an etchant, a solution is used, which includes: nitric acid – HNO₃, hydrofluoric acid – HF, deionized water – H₂O, at the following ratios: HNO₃:HF:H₂O – 1:10:35, and time of the treatment of the surface of silicon plates at a room temperature is no more than 25±5 s.

EFFECT: invention provides complete removal of oxide residues from a surface of a backside of silicon plates before spraying, and reduction in a temperature of treatment.

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