FIELD: chemistry.
SUBSTANCE: invention relates to technology of producing semi-conductor devices, to methods of quartz gear processing, in particularly of quartz tube, applied in carrying out high temperature processes in diffusion furnaces. Essence of invention: in method of quartz gear processing, which includes processing of quartz tube after high temperature operations in solution, which consists of hydrofluoric acid and deionised water processing of quartz tube is carried out at room temperature during 30±10 minutes in solution with the following component ratio HF:H20 = 1:4, after processing in solution, quartz tube is washed in deionised water at room temperature during 30±10 minutes.
EFFECT: complete removal of different pollutions from quartz pipe after high temperature operations, reduction of temperature and quality of quartz tube processing.
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